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Article cité :

The EL2 center in GaAs: symmetry and metastability

N. T. Bagraev

J. Phys. I France, 1 10 (1991) 1511-1527

DOI: https://doi.org/10.1051/jp1:1991223

Citations de cet article :

High-temperature quantum kinetic effect in silicon nanosandwiches

N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, et al.
Low Temperature Physics 43 (1) 110 (2017)
https://doi.org/10.1063/1.4974190

Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

N. T. Bagraev, E. I. Chaikina, E. Yu. Danilovskii, et al.
Semiconductors 50 (4) 466 (2016)
https://doi.org/10.1134/S1063782616040060

Room temperature de Haas–van Alphen effect in silicon nanosandwiches

N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, et al.
Semiconductors 50 (8) 1025 (2016)
https://doi.org/10.1134/S1063782616080273

Physical foundations of metastable impurity center reconstruction in semiconductors

D. E. Onopko and A. I. Ryskin
Semiconductors 35 (11) 1223 (2001)
https://doi.org/10.1134/1.1418062

Chemical bonding and structure of metastable impurity centers in semiconductor crystals

D. E. Onopko and A. I. Ryskin
Journal of Structural Chemistry 41 (4) 666 (2000)
https://doi.org/10.1007/BF02683931

Field-dependent negative-U properties for zinc-related centre in silicon

N.T. Bagraev
Solid State Communications 95 (6) 365 (1995)
https://doi.org/10.1016/0038-1098(95)00285-5

Metastable Zn-related centres in silicon

N T Bagraev
Semiconductor Science and Technology 9 (1) 61 (1994)
https://doi.org/10.1088/0268-1242/9/1/011

Analysis of defect energy levels in the limit of low emission rates

C. D. Lamp, S. Yang and S. Gangopadhyay
Journal of Applied Physics 73 (6) 2854 (1993)
https://doi.org/10.1063/1.353012