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Charge Redistribution and Potential Barrier Reconstruction in SI GaAs Caused by EL2 State Change

R. Kiliulis, V. Kažukauskas, J. Storasta, J.-V. Vaitkus

J. Phys. I France, 6 9 (1996) 1165-1187

Accepté le : 1996-05-21

DOI: https://doi.org/10.1051/jp1:1996122

Citations de cet article :

Electrically active defects and related long-lasting persistent (photo-)conductivity phenomena in Thallium Bromide crystals

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Molecular Crystals and Liquid Crystals 655 (1) 142 (2017)
https://doi.org/10.1080/15421406.2017.1360710

Enhanced persistent photoconduction in CuInS2–ZnIn2S4alloys single crystals and processes of its relaxation

V. V. Bozhko, A. V. Novosad, O. V. Parasyuk, et al.
Molecular Crystals and Liquid Crystals 627 (1) 153 (2016)
https://doi.org/10.1080/15421406.2015.1137382

GaAs thermal treatment with fullerenes

Algirdas Mekys, Jurgis Storasta, Algirdas P. Smilga, et al.
Materials Science in Semiconductor Processing 11 (2) 63 (2008)
https://doi.org/10.1016/j.mssp.2008.11.002

Defects and radiation damage in semi-insulating GaAs radiation detectors

J Vaitkus, V Kazukauskas, R Didziulis, et al.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 410 (1) 61 (1998)
https://doi.org/10.1016/S0168-9002(98)00143-0

Influence of defect inhomogeneities on the Hall mobility and concentration in undoped GaAs

V. Kažukauskas
Journal of Applied Physics 84 (4) 2053 (1998)
https://doi.org/10.1063/1.368265

Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors

R. Bates, R. Didziulis, V. Kazukauskas, et al.
IEEE Transactions on Nuclear Science 45 (3) 591 (1998)
https://doi.org/10.1109/23.682454

R. Bates, R. Didziulis, V. Mazukauskas, V.O. O'Shea, C. Raine, V. Rinkevicius, K.M. Smith, J. Storasta and J. Vaitkus
51 (1997)
https://doi.org/10.1109/NSSMIC.1997.672504