Mechanism for Coherent Island Formation during Heteroepitaxy
J. Phys. I France, 6 4 (1996) 575-581
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Anomalous intralayer growth of epitaxial Si on Ag(111)
Kejian Wang, Geoffroy Prévot and Jean-Noël AquaScientific Reports 14 (1) (2024)
https://doi.org/10.1038/s41598-024-52348-1
Kinetic Monte Carlo simulations of quantum dot self-assembly
Matthew Abramson, Hunter J. Coleman, Paul J. Simmonds, Tim P. Schulze and Christian RatschJournal of Crystal Growth 126846 (2022)
https://doi.org/10.1016/j.jcrysgro.2022.126846
Kinetic Monte Carlo simulation of growth of Ge quantum dot multilayers with amorphous matrix
Jan Endres, Václav Holý, Stanislav Daniš and Maja BuljanJournal of Nanoparticle Research 19 (4) (2017)
https://doi.org/10.1007/s11051-017-3789-7
Instability-driven quantum dots
Jean-Noël Aqua and Thomas FrischComptes Rendus. Physique 16 (8) 741 (2015)
https://doi.org/10.1016/j.crhy.2015.08.002
Nanostructured Semiconductors
Isabelle Berbezier, Antoine Ronda, Jean-Noël Aqua, Luc Favre and Thomas FrischNanostructured Semiconductors 165 (2014)
https://doi.org/10.1201/b15634-6
Growth and self-organization of SiGe nanostructures
J.-N. Aqua, I. Berbezier, L. Favre, T. Frisch and A. RondaPhysics Reports 522 (2) 59 (2013)
https://doi.org/10.1016/j.physrep.2012.09.006
Nucleation of size calibrated three-dimensional nanodots in atomistic model of strained epitaxy: a Monte Carlo study
V I Tokar and H DreysséJournal of Physics: Condensed Matter 25 (4) 045001 (2013)
https://doi.org/10.1088/0953-8984/25/4/045001
Kinetic Monte Carlo simulations of the growth of silicon germanium pyramids
Philippe Gaillard, Jean-Noël Aqua and Thomas FrischPhysical Review B 87 (12) (2013)
https://doi.org/10.1103/PhysRevB.87.125310
Kinetic Monte Carlo simulations of heteroepitaxial growth with an atomistic model of elasticity
Pinku Nath and Madhav RanganathanSurface Science 606 (17-18) 1450 (2012)
https://doi.org/10.1016/j.susc.2012.05.015
Strain dependence for microscopic growth parameters for Ag on Ag(100)
C. RatschPhysical Review B 83 (15) (2011)
https://doi.org/10.1103/PhysRevB.83.153406
Kinetic Monte Carlo simulation of shape transition of strained quantum dots
Chi-Hang LamJournal of Applied Physics 108 (6) (2010)
https://doi.org/10.1063/1.3483248
Level-set simulation for the strain-driven sharpening of the island-size distribution during submonolayer heteroepitaxial growth
C. Ratsch, J. DeVita and P. SmerekaPhysical Review B 80 (15) (2009)
https://doi.org/10.1103/PhysRevB.80.155309
Kinetic Monte Carlo simulation of self-organized growth of PbSe/PbEuTe quantum dot multilayers
M. Mixa, V. Holý, G. Springholz and G. BauerPhysical Review B 80 (4) (2009)
https://doi.org/10.1103/PhysRevB.80.045325
Elastic interactions and kinetics during reversible submonolayer growth: Monte Carlo simulations
Jean-Noël Aqua and Thomas FrischPhysical Review B 78 (12) (2008)
https://doi.org/10.1103/PhysRevB.78.121305
Conditions for organized nanoring growth using kinetic Monte Carlo simulations
F. Dumont, F. Picaud, C. Ramseyer and C. GirardetPhysical Review B 77 (15) (2008)
https://doi.org/10.1103/PhysRevB.77.153404
Si/SiGe heterostructures for advanced microelectronic devices
I. Berbezier and A. RondaPhase Transitions 81 (7-8) 751 (2008)
https://doi.org/10.1080/01411590802130576
Renormalization of stochastic lattice models: Epitaxial surfaces
Christoph A. Haselwandter and Dimitri D. VvedenskyPhysical Review E 77 (6) (2008)
https://doi.org/10.1103/PhysRevE.77.061129
MULTISCALE THEORY OF FLUCTUATING INTERFACES: RENORMALIZATION AND SELF-ORGANIZATION
CHRISTOPH A. HASELWANDTER and DIMITRI D. VVEDENSKYInternational Journal of Modern Physics B 21 (23n24) 4151 (2007)
https://doi.org/10.1142/S0217979207045335
Langevin equation for self-organized morphologies of thin heteroepitaxial films
Christoph A. Haselwandter and Dimitri D. VvedenskySurface Science 601 (13) 2762 (2007)
https://doi.org/10.1016/j.susc.2006.12.041
A Multigrid-Fourier Method for the Computation of Elastic Fields with Application to Heteroepitaxy
Giovanni Russo and Peter SmerekaMultiscale Modeling & Simulation 5 (1) 130 (2006)
https://doi.org/10.1137/05063800X
Time-dependent annealing and deposition on substrates with repulsive interactions
J. A. Venables, J. DeGraffenreid, D. Kay and P. YangPhysical Review B 74 (7) (2006)
https://doi.org/10.1103/PhysRevB.74.075412
Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
Giovanni Russo and Peter SmerekaJournal of Computational Physics 214 (2) 809 (2006)
https://doi.org/10.1016/j.jcp.2005.10.008
Stochastic equation for the morphological evolution of heteroepitaxial thin films
Christoph A. Haselwandter and Dimitri D. VvedenskyPhysical Review B 74 (12) (2006)
https://doi.org/10.1103/PhysRevB.74.121408
Size calibration of self-assembled nanoparticles in a model of strained epitaxy with passive substrate
V. I. Tokar and H. DreysséPhysical Review B 72 (3) (2005)
https://doi.org/10.1103/PhysRevB.72.035438
Self-organized growth on GaAs surfaces
Bruce A. Joyce and Dimitri D. VvedenskyMaterials Science and Engineering: R: Reports 46 (6) 127 (2004)
https://doi.org/10.1016/j.mser.2004.10.001
From Atomistic to Continuum Descriptions of Morphological Evolution
Christoph A. Haselwandter and Dimitri D. VvedenskyMRS Proceedings 859 (2004)
https://doi.org/10.1557/PROC-859-JJ8.8
LP-MOVPE growth of InAs quantum dots using tertiarybutylarsine (TBA) in pure N2 ambient
G.S Huang, X.H Tang, B.L Zhang, Y.C Zhang and S.C TjinJournal of Crystal Growth 268 (3-4) 444 (2004)
https://doi.org/10.1016/j.jcrysgro.2004.04.070
Multiscale modelling of nanostructures
Dimitri D VvedenskyJournal of Physics: Condensed Matter 16 (50) R1537 (2004)
https://doi.org/10.1088/0953-8984/16/50/R01
Microstructural evolution of Ge/Si(100) nanoscale islands
David J Smith, D Chandrasekhar, S.A Chaparro, et al.Journal of Crystal Growth 259 (3) 232 (2003)
https://doi.org/10.1016/j.jcrysgro.2003.07.025
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
Y. G. Cao, M. H. Xie, Y. Liu, et al.Physical Review B 68 (16) (2003)
https://doi.org/10.1103/PhysRevB.68.161304
Control of strain-mediated growth kinetics of self-assembled semiconductor quantum dots
M. Meixner, R. Kunert and E. SchöllPhysical Review B 67 (19) 195301 (2003)
https://doi.org/10.1103/PhysRevB.67.195301
Theory of strain relaxation in heteroepitaxial systems
A. Schindler, M. Gyure, G. Simms, et al.Physical Review B 67 (7) 075316 (2003)
https://doi.org/10.1103/PhysRevB.67.075316
Atomistic Aspects of Epitaxial Growth
A. C. Schindler, D. D. Vvedensky, M. F. Gyure, et al.Atomistic Aspects of Epitaxial Growth 337 (2002)
https://doi.org/10.1007/978-94-010-0391-9_26
Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy
Yasuyuki Kobayashi, V Perez-Solorzano, J Off, et al.Journal of Crystal Growth 243 (1) 103 (2002)
https://doi.org/10.1016/S0022-0248(02)01485-9
Self-assembling Ge(Si)/Si(100) quantum dots
J. DruckerIEEE Journal of Quantum Electronics 38 (8) 975 (2002)
https://doi.org/10.1109/JQE.2002.800962
SiGe nanostructures: new insights into growth processes
I Berbezier, A Ronda and A PortavoceJournal of Physics: Condensed Matter 14 (35) 8283 (2002)
https://doi.org/10.1088/0953-8984/14/35/306
Scaling behavior in InAs/GaAs(001) quantum-dot formation
T. Krzyzewski, P. Joyce, G. Bell and T. JonesPhysical Review B 66 (20) 201302 (2002)
https://doi.org/10.1103/PhysRevB.66.201302
Self-Assembled Quantum Dots: Crossover from Kinetically Controlled to Thermodynamically Limited Growth
M. Meixner, E. Schöll, V. A. Shchukin and D. BimbergPhysical Review Letters 87 (23) (2001)
https://doi.org/10.1103/PhysRevLett.87.236101
Instabilities in crystal growth by atomic or molecular beams
Paolo Politi, Geneviève Grenet, Alain Marty, Anne Ponchet and Jacques VillainPhysics Reports 324 (5-6) 271 (2000)
https://doi.org/10.1016/S0370-1573(99)00046-0
Growth of self-assembled GaxIn1−xP quantum islands on GaP
J Porsche and F ScholzJournal of Crystal Growth 221 (1-4) 571 (2000)
https://doi.org/10.1016/S0022-0248(00)00780-6
Structure and mechanical properties of fast cooled and annealed poly(phenylene sulfide)/Vectra A blends
B. E. Ruiz De Gauna, M. Gaztelumendi and J. Naz�balPolymer Composites 21 (1) 72 (2000)
https://doi.org/10.1002/pc.10166
Evolution of Ge/Si(100) islands: Island size and temperature dependence
S. A. Chaparro, Y. Zhang, Jeff Drucker, D. Chandrasekhar and David J. SmithJournal of Applied Physics 87 (5) 2245 (2000)
https://doi.org/10.1063/1.372168
Strain relief via trench formation in Ge/Si(100) islands
S. A. Chaparro, Y. Zhang and Jeff DruckerApplied Physics Letters 76 (24) 3534 (2000)
https://doi.org/10.1063/1.126698
Novel Strain-Relief Mechanisms For Ge/Si(100) Coherent Islands
Jeff Drucker, Sergio Chaparro, Yangting Zhang, et al.MRS Proceedings 583 (1999)
https://doi.org/10.1557/PROC-583-125
Evolution of coherent islands in Si1-xGex/Si(001)
J. Floro, E. Chason, L. Freund, et al.Physical Review B 59 (3) 1990 (1999)
https://doi.org/10.1103/PhysRevB.59.1990
Cathodoluminescence, microstructure, and morphology of tensile-strained Al[sub x]Ga[sub (1−x)]N epitaxial films grown by gas source molecular beam epitaxy
J. E. Van Nostrand, R. L. Hengehold, K. D. Leedy, et al.Journal of Applied Physics 86 (6) 3120 (1999)
https://doi.org/10.1063/1.371176
Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics
M. Zinke-AllmangThin Solid Films 346 (1-2) 1 (1999)
https://doi.org/10.1016/S0040-6090(98)01479-5
Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films
J. E. Van Nostrand, David G. Cahill, I. Petrov and J. E. GreeneJournal of Applied Physics 83 (2) 1096 (1998)
https://doi.org/10.1063/1.366799
Kinetic Monte Carlo simulation of the nucleation stage of the self-organized growth of quantum dots
E. Schöll and S. BoseSolid-State Electronics 42 (7-8) 1587 (1998)
https://doi.org/10.1016/S0038-1101(98)00076-8
Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
Hao Lee, Roger Lowe-Webb, Weidong Yang and Peter C. SercelApplied Physics Letters 72 (7) 812 (1998)
https://doi.org/10.1063/1.120901
Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions
Jeff Drucker and Sergio ChaparroApplied Physics Letters 71 (5) 614 (1997)
https://doi.org/10.1063/1.119809
Surface Diffusion
Christophe Duport, Jacques Villain and Catherine PriesterNATO ASI Series, Surface Diffusion 360 191 (1997)
https://doi.org/10.1007/978-1-4899-0262-7_16
Surfactant-mediated growth of CoSi2 on Si(100)
V. Scheuch, B. Voigtländer and H.P. BonzelSurface Science 381 (1) L546 (1997)
https://doi.org/10.1016/S0039-6028(97)00049-6
Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy
V. Scheuch, B. Voigtländer and H.P. BonzelSurface Science 372 (1-3) 71 (1997)
https://doi.org/10.1016/S0039-6028(96)01132-6
Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001)
T.R. Ramachandran, R. Heitz, N.P. Kobayashi, et al.Journal of Crystal Growth 175-176 216 (1997)
https://doi.org/10.1016/S0022-0248(96)00855-X
Surface Diffusion
H. T. Dobbs, A. Zangwill and D. D. VvedenskyNATO ASI Series, Surface Diffusion 360 263 (1997)
https://doi.org/10.1007/978-1-4899-0262-7_24
Diffusion on strained surfaces
M. Schroeder and D.E. WolfSurface Science 375 (1) 129 (1997)
https://doi.org/10.1016/S0039-6028(96)01250-2
SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime
J. A. Floro, E. Chason, R. D. Twesten, R. Q. Hwang and L. B. FreundPhysical Review Letters 79 (20) 3946 (1997)
https://doi.org/10.1103/PhysRevLett.79.3946
Growth aspects of quantum dots
Catherine Priester and Michel LannooCurrent Opinion in Solid State and Materials Science 2 (6) 716 (1997)
https://doi.org/10.1016/S1359-0286(97)80015-0
Growth mechanisms of SiGe on (111) and (100) Si substrates
B. Gallas, I. Berbezier, A. Ronda and J. DerrienThin Solid Films 294 (1-2) 22 (1997)
https://doi.org/10.1016/S0040-6090(96)09266-8
Mass transfer in Stranski–Krastanow growth of InAs on GaAs
T. R. Ramachandran, R. Heitz, P. Chen and A. MadhukarApplied Physics Letters 70 (5) 640 (1997)
https://doi.org/10.1063/1.118848
Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers
B.R. Bennett, B.V. Shanabrook, P.M. Thibado, L.J. Whitman and R. MagnoJournal of Crystal Growth 175-176 888 (1997)
https://doi.org/10.1016/S0022-0248(96)00917-7