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Cited article:

Exoelectron emission studies of trap spectrum in ultrathin amorphous Si3N4 films

M. Naich, G. Rosenman, Ya. Roizin and M. Molotskii
Solid-State Electronics 48 (3) 477 (2004)
https://doi.org/10.1016/j.sse.2003.08.008

Auger mechanism of exoelectron emission in dielectrics with high electron affinity

M. Molotskii, M. Naich and G. Rosenman
Journal of Applied Physics 94 (7) 4652 (2003)
https://doi.org/10.1063/1.1608471

Exoelectron emission spectroscopy of silicon nitride thin films

G. Rosenman, M. Naich, M. Molotskii, Yu. Dechtiar and V. Noskov
Applied Physics Letters 80 (15) 2743 (2002)
https://doi.org/10.1063/1.1469656

Strong Visible Photoluminescence in Silicon Nitride thin Films Deposited at High Rates

Sadanand V. Deshpande, Erdogan Gulari, Steven W. Brown and S.C. Rand
MRS Proceedings 325 (1993)
https://doi.org/10.1557/PROC-325-177