Influence of kinetic roughening on the epitaxial growth of silicon
J. Phys. I France, 4 9 (1994) 1309-1324
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Growth of Si on Si(1 1 1)-7 × 7 at room temperature under laser substrate excitation
Ibrahim El-Kholy and Hani E. Elsayed-AliThe European Physical Journal Applied Physics 69 (1) 10301 (2015)
https://doi.org/10.1051/epjap/2014140126
Nanostructured Semiconductors
Isabelle Berbezier, Antoine Ronda, Jean-Noël Aqua, Luc Favre and Thomas FrischNanostructured Semiconductors 165 (2014)
https://doi.org/10.1201/b15634-6
Si/SiGe heterostructures for advanced microelectronic devices
I. Berbezier and A. RondaPhase Transitions 81 (7-8) 751 (2008)
https://doi.org/10.1080/01411590802130576
Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering
L. M. McGill, E. A. Fitzgerald, A. Y. Kim, et al.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22 (4) 1899 (2004)
https://doi.org/10.1116/1.1775003
SiGe nanostructures: new insights into growth processes
I Berbezier, A Ronda and A PortavoceJournal of Physics: Condensed Matter 14 (35) 8283 (2002)
https://doi.org/10.1088/0953-8984/14/35/306
Scanning tunneling microscopy study of rough Si films deposited on Si(111)
J.B Wedding, G.-C Wang and T.-M LuSurface Science 478 (1-2) 83 (2001)
https://doi.org/10.1016/S0039-6028(01)00900-1
Elastic Strain Relaxation in Si1-xGex Layers Epitaxially Grown on Si Substrates
I. Berbezier, B. Gallas and J. DerrienSurface Review and Letters 05 (01) 133 (1998)
https://doi.org/10.1142/S0218625X98000268
Dependence of SiGe growth instability on Si substrate orientation
I. Berbezier, B. Gallas, A. Ronda and J. DerrienSurface Science 412-413 415 (1998)
https://doi.org/10.1016/S0039-6028(98)00461-0
Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study
D. Dentel, J.L. Bischoff, L. Kubler, J. Werckmann and M. RomeoJournal of Crystal Growth 191 (4) 697 (1998)
https://doi.org/10.1016/S0022-0248(98)00354-6
Defect-mediated kinetic roughening in low-temperature MBE growth of Si/Si (111)
B Gallas, I Berbezier, J Derrien, et al.Europhysics Letters (EPL) 41 (5) 519 (1998)
https://doi.org/10.1209/epl/i1998-00184-7
Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth
B. Gallas, I. Berbezier, J. Derrien, et al.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 16 (3) 1564 (1998)
https://doi.org/10.1116/1.589940
Surface roughening during low temperature Si(100) epitaxy
O. P. Karpenko, S. M. Yalisove and D. J. EagleshamJournal of Applied Physics 82 (3) 1157 (1997)
https://doi.org/10.1063/1.365883
Origins of scale invariance in growth processes
Joachim KrugAdvances in Physics 46 (2) 139 (1997)
https://doi.org/10.1080/00018739700101498
Homoepitaxy of silicon at low temperature on clean and Ga-covered substrates
B Gallas, I Berbezier and J DerrienThin Solid Films 294 (1-2) 69 (1997)
https://doi.org/10.1016/S0040-6090(96)09463-1
Calculated Schwoebel barriers on Si(111) steps using an empirical potential
S. Kodiyalam, K. E. Khor and S. Das SarmaPhysical Review B 53 (15) 9913 (1996)
https://doi.org/10.1103/PhysRevB.53.9913
Self-diffusion on Si(111) surfaces
A. V. Latyshev, A. B. Krasilnikov and A. L. AseevPhysical Review B 54 (4) 2586 (1996)
https://doi.org/10.1103/PhysRevB.54.2586
Gallium-mediated homoepitaxial growth of silicon at low temperatures
B. Gallas, I. Berbezier, J. Chevrier and J. DerrienPhysical Review B 54 (7) 4919 (1996)
https://doi.org/10.1103/PhysRevB.54.4919