The Citing articles tool gives a list of articles citing the current article. The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program . You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
Harvey Dobbs , Joachim Krug
J. Phys. I France, 6 3 (1996) 413-430
This article has been cited by the following article(s):
18 articles
Initial stages of gold adsorption on silicon stepped surface at elevated temperatures
S. S. Kosolobov, Se Ahn Song, E. E. Rodyakina and A. V. Latyshev Semiconductors 41 (4) 448 (2007) https://doi.org/10.1134/S1063782607040173
Multiscale Modeling in Epitaxial Growth
Joachim Krug ISNM International Series of Numerical Mathematics, Multiscale Modeling in Epitaxial Growth 149 69 (2005) https://doi.org/10.1007/3-7643-7343-1_6
Scaling properties of step bunches induced by sublimation and related mechanisms
J. Krug, V. Tonchev, S. Stoyanov and A. Pimpinelli Physical Review B 71 (4) (2005) https://doi.org/10.1103/PhysRevB.71.045412
Collective Dynamics of Nonlinear and Disordered Systems
Joachim Krug Collective Dynamics of Nonlinear and Disordered Systems 5 (2005) https://doi.org/10.1007/3-540-26869-3_2
Development of In-Situ Surface Observation System with an Atomic Resolution under Tensile Stress by Atomic Force Microscope
Akihito Matsumuro, Kimiharu Kayukawa, Youhei Fujimoto, Taeko Ando and Kazuo Sato MRS Proceedings 750 Y8.5 (2002) https://doi.org/10.1557/PROC-750-Y8.5
Step bunching, step wandering and faceting: self-organization at Si surfaces
Katsumichi Yagi, Hiroki Minoda and Masashi Degawa Surface Science Reports 43 (2-4) 45 (2001) https://doi.org/10.1016/S0167-5729(01)00013-9
Anisotropy of mass transport on Si(001) surfaces heated with direct current
J.-F. Nielsen, M.S. Pettersen and J.P. Pelz Surface Science 480 (1-2) 84 (2001) https://doi.org/10.1016/S0039-6028(01)01010-X
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
M. Xie, S. Cheung, L. Zheng, et al. Physical Review B 61 (15) 9983 (2000) https://doi.org/10.1103/PhysRevB.61.9983
OBSERVATION OF DIRECT-CURRENT-INDUCED STEP BENDING PATTERNS ON Si(001)
J.-F. NIELSEN, J. P. PELZ and M. S. PETTERSEN Surface Review and Letters 07 (05n06) 577 (2000) https://doi.org/10.1142/S0218625X00000713
Growth of step bunches formed by the drift of adatoms
Masahide Sato and Makio Uwaha Surface Science 442 (2) 318 (1999) https://doi.org/10.1016/S0039-6028(99)00932-2
Wandering and Bunching Instabilities of Steps Described By Nonlinear Evolution Equations
Makio Uwaha and Masahide Sato Surface Review and Letters 05 (03n04) 841 (1998) https://doi.org/10.1142/S0218625X98001213
Adatom effective charge in morphology evolution on Si(111) surface
A.V. Latyshev, H. Minoda, Y. Tanishiro and K. Yagi Applied Surface Science 130-132 60 (1998) https://doi.org/10.1016/S0169-4332(98)00025-7
Current-Induced Step Bending Instability on Vicinal Surfaces
Da-Jiang Liu, John D. Weeks and Daniel Kandel Physical Review Letters 81 (13) 2743 (1998) https://doi.org/10.1103/PhysRevLett.81.2743
Hierarchical Bunching of Steps in a Conserved System
Masahide Sato and Makio Uwaha Journal of the Physical Society of Japan 67 (11) 3675 (1998) https://doi.org/10.1143/JPSJ.67.3675
Quantitative theory of current-induced step bunching on Si(111)
Da-Jiang Liu and John Weeks Physical Review B 57 (23) 14891 (1998) https://doi.org/10.1103/PhysRevB.57.14891
Electromigration and gold-induced step bunching on the Si(111) surface
A.V Latyshev, H Minoda, Y Tanishiro and K Yagi Surface Science 401 (1) 22 (1998) https://doi.org/10.1016/S0039-6028(97)00901-1
Peculiarities of step bunching on Si(001) surface induced by DC heating
A.V Latyshev, L.V Litvin and A.L Aseev Applied Surface Science 130-132 139 (1998) https://doi.org/10.1016/S0169-4332(98)00040-3
Surface Electromigration as a Moving Boundary Value Problem
M. Schimschak and J. Krug Physical Review Letters 78 (2) 278 (1997) https://doi.org/10.1103/PhysRevLett.78.278