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Article cité :

Growth of Si on Si(1 1 1)-7 × 7 at room temperature under laser substrate excitation

Ibrahim El-Kholy and Hani E. Elsayed-Ali
The European Physical Journal Applied Physics 69 (1) 10301 (2015)
https://doi.org/10.1051/epjap/2014140126

Nanostructured Semiconductors

Isabelle Berbezier, Antoine Ronda, Jean-Noël Aqua, Luc Favre and Thomas Frisch
Nanostructured Semiconductors 165 (2014)
https://doi.org/10.1201/b15634-6

Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering

L. M. McGill, E. A. Fitzgerald, A. Y. Kim, et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22 (4) 1899 (2004)
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Elastic Strain Relaxation in Si1-xGex Layers Epitaxially Grown on Si Substrates

I. Berbezier, B. Gallas and J. Derrien
Surface Review and Letters 05 (01) 133 (1998)
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Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study

D. Dentel, J.L. Bischoff, L. Kubler, J. Werckmann and M. Romeo
Journal of Crystal Growth 191 (4) 697 (1998)
https://doi.org/10.1016/S0022-0248(98)00354-6

Defect-mediated kinetic roughening in low-temperature MBE growth of Si/Si (111)

B Gallas, I Berbezier, J Derrien, et al.
Europhysics Letters (EPL) 41 (5) 519 (1998)
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Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth

B. Gallas, I. Berbezier, J. Derrien, et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 16 (3) 1564 (1998)
https://doi.org/10.1116/1.589940

Surface roughening during low temperature Si(100) epitaxy

O. P. Karpenko, S. M. Yalisove and D. J. Eaglesham
Journal of Applied Physics 82 (3) 1157 (1997)
https://doi.org/10.1063/1.365883

Gallium-mediated homoepitaxial growth of silicon at low temperatures

B. Gallas, I. Berbezier, J. Chevrier and J. Derrien
Physical Review B 54 (7) 4919 (1996)
https://doi.org/10.1103/PhysRevB.54.4919