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https://doi.org/10.1016/j.surfrep.2013.10.001

Influence of the interfacial chemical environment on the luminescence of 3CSiC nanoparticles

Yu. Zakharko, J. Botsoa, S. Alekseev, et al.
Journal of Applied Physics 107 (1) (2010)
https://doi.org/10.1063/1.3273498

Photoluminescence‐Based Sensing With Porous Silicon Films, Microparticles, and Nanoparticles

Michael J. Sailor and Elizabeth C. Wu
Advanced Functional Materials 19 (20) 3195 (2009)
https://doi.org/10.1002/adfm.200900535

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

Mamadou Diarra, Christophe Delerue, Yann-Michel Niquet and Guy Allan
Journal of Applied Physics 103 (7) (2008)
https://doi.org/10.1063/1.2901182

Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue and Guy Allan
Physical Review B 75 (4) (2007)
https://doi.org/10.1103/PhysRevB.75.045301

Effects of Stain Etchant Composition on the Photoluminescence and Morphology of Porous Silicon

Mona Nahidi and Kurt W. Kolasinski
Journal of The Electrochemical Society 153 (1) C19 (2006)
https://doi.org/10.1149/1.2129558

Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

L. K. Pan, Y. K. Ee, C. Q. Sun, et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 22 (2) 583 (2004)
https://doi.org/10.1116/1.1651108

Electronic and optical properties of semiconductor nanostructures

G. Iadonisi, G. Cantele, V. Marigliano Ramaglia and D. Ninno
physica status solidi (b) 237 (1) 320 (2003)
https://doi.org/10.1002/pssb.200301772

Dimensionality-Dependent Self-Energy Corrections and Exchange-Correlation Potential in Semiconductor Nanostructures

C. Delerue, G. Allan and M. Lannoo
Physical Review Letters 90 (7) (2003)
https://doi.org/10.1103/PhysRevLett.90.076803

On the role of the pore filling medium in photoluminescence from photochemically etched porous silicon

Kurt W. Kolasinski, John C. Barnard, Santanu Ganguly, et al.
Journal of Applied Physics 88 (5) 2472 (2000)
https://doi.org/10.1063/1.1287770

In situ photoluminescence studies of photochemically grown porous silicon

Kurt W Kolasinski, John C Barnard, Lynne Koker, Santanu Ganguly and Richard E Palmer
Materials Science and Engineering: B 69-70 157 (2000)
https://doi.org/10.1016/S0921-5107(99)00243-3

Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects

S. Fellah, R.B. Wehrspohn, N. Gabouze, F. Ozanam and J.-N. Chazalviel
Journal of Luminescence 80 (1-4) 109 (1998)
https://doi.org/10.1016/S0022-2313(98)00077-5

Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments

Herman A. Lopez, X. Linda Chen, Samson A. Jenekhe and Philippe M. Fauchet
Journal of Luminescence 80 (1-4) 115 (1998)
https://doi.org/10.1016/S0022-2313(98)00078-7

Light Emission in Silicon: From Physics to Devices

C. Delerue, G. Allan and M. Lannoo
Semiconductors and Semimetals, Light Emission in Silicon: From Physics to Devices 49 253 (1997)
https://doi.org/10.1016/S0080-8784(08)62505-3

Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase

A. Bsiesy, B. Gelloz, F. Gaspard and F. Muller
Journal of Applied Physics 79 (5) 2513 (1996)
https://doi.org/10.1063/1.361180

Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites

G. Allan, C. Delerue, M. Lannoo and E. Martin
Physical Review B 52 (16) 11982 (1995)
https://doi.org/10.1103/PhysRevB.52.11982

Electronic states of photocarriers in porous silicon studied by photomodulated infrared spectroscopy

V. M. Dubin, F. Ozanam and J.-N. Chazalviel
Physical Review B 50 (20) 14867 (1994)
https://doi.org/10.1103/PhysRevB.50.14867