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Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method: surface diffusion, spiral growth, H2 and GaCl3 mechanisms

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DOI: 10.1016/S0022-0248(99)00251-1
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Kinetic Modelling Of The Selective Epitaxy Of GaAs On Patterned Substrates By Hvpe. Application to the Conformal Growth Of Low Defect Density GaAs Layers On Silicon

E. Gil-Lafon, J. Napierala, D. Castelluci, et al.
MRS Proceedings 535 33 (1998)
DOI: 10.1557/PROC-535-33
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Novel mechanism for the onset of morphological instabilities during chemical vapour epitaxial growth

A. Pimpinelli and A. Videcoq
Surface Science 445 (1) L23 (2000)
DOI: 10.1016/S0039-6028(99)01100-0
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High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

Kevin L. Schulte, Anna Braun, John Simon and Aaron J. Ptak
Applied Physics Letters 112 (4) 042101 (2018)
DOI: 10.1063/1.5013136
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Growth of gallium nitride by HVPE

Robert Cadoret and Agnès Trassoudaine
Journal of Physics: Condensed Matter 13 (32) 6893 (2001)
DOI: 10.1088/0953-8984/13/32/302
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Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces

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DOI: 10.1016/S0022-0248(03)01310-1
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Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

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Journal of Crystal Growth 260 (1-2) 7 (2004)
DOI: 10.1016/j.jcrysgro.2003.07.027
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Growth of mm-thick orientation-patterned GaAs for IR and THZ generation

C. Lynch, D.F. Bliss, T. Zens, et al.
Journal of Crystal Growth 310 (24) 5241 (2008)
DOI: 10.1016/j.jcrysgro.2008.08.050
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A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy

K. L. Schulte and T. F. Kuech
Journal of Applied Physics 116 (24) 243504 (2014)
DOI: 10.1063/1.4904745
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Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

E Aujol, A Trassoudaine, D Castelluci and R Cadoret
Materials Science and Engineering: B 82 (1-3) 65 (2001)
DOI: 10.1016/S0921-5107(00)00725-X
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Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies

E Gil-Lafon, J Napierala, D Castelluci, et al.
Journal of Crystal Growth 222 (3) 482 (2001)
DOI: 10.1016/S0022-0248(00)00961-1
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Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

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Chinese Physics B 22 (1) 017801 (2013)
DOI: 10.1088/1674-1056/22/1/017801
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Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

R. Cadoret, A. Trassoudaine and E. Aujol
physica status solidi (a) 183 (1) 5 (2001)
DOI: 10.1002/1521-396X(200101)183:1<5::AID-PSSA5>3.0.CO;2-K
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Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE

A. Trassoudaine, E. Aujol, P. Disseix, D. Castelluci and R. Cadoret
physica status solidi (a) 176 (1) 425 (1999)
DOI: 10.1002/(SICI)1521-396X(199911)176:1<425::AID-PSSA425>3.0.CO;2-Q
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Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

E. Aujol, A. Trassoudaine, L. Siozade, A. Pimpinelli and R. Cadoret
Journal of Crystal Growth 230 (3-4) 372 (2001)
DOI: 10.1016/S0022-0248(01)01263-5
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Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy

E Gil-Lafon, J Napierala, A Pimpinelli, et al.
Journal of Crystal Growth 258 (1-2) 14 (2003)
DOI: 10.1016/S0022-0248(03)01311-3
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Handbook of Crystal Growth

Evelyne Gil, Yamina André, Robert Cadoret and Agnès Trassoudaine
Handbook of Crystal Growth 51 (2015)
DOI: 10.1016/B978-0-444-63304-0.00002-0
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A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl

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DOI: 10.1016/j.jcrysgro.2004.04.033
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Springer Handbook of Crystal Growth

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James Friend, H. Hoe Tan, Yamina André, Agnès Trassoudaine, Geoffrey Avit, Kaddour Lekhal, Mohammed R. Ramdani, Christine Leroux, Guillaume Monier, Christelle Varenne, Philip Hoggan, Dominique Castelluci, Catherine Bougerol, François Réveret, Joël Leymarie, Elodie Petit, Vladimir G. Dubrovskii and Evelyne Gil
8923 89230O (2013)
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