J. Phys. I France 4 (1994) 617-622
Stepped structure of 6H silicon carbide vicinal surfacesStéphane Tyc
Laboratoire Central de Recherches, Thomson-CSF, 91404 Orsay Cedex, France
(Received 10 February 1994, accepted in final form 18 March 1994)
Atomic Force Microscopy is used to study the morphology of several surfaces of 6H SiC (0001). The steps observed are not, as widely thought, single steps, but are of the order of one unit cell (1.5 nm) for low tilt angles and much higher (about 10 unit cells) for tilt angles of the order of 4°. Step bunching appears to lead to the formation of regular cliffs.
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