Numéro
J. Phys. I France
Volume 4, Numéro 5, May 1994
Page(s) 617 - 622
DOI https://doi.org/10.1051/jp1:1994102
DOI: 10.1051/jp1:1994102
J. Phys. I France 4 (1994) 617-622

Short Communication

Stepped structure of 6H silicon carbide vicinal surfaces

Stéphane Tyc

Laboratoire Central de Recherches, Thomson-CSF, 91404 Orsay Cedex, France


(Received 10 February 1994, accepted in final form 18 March 1994)

Abstract
Atomic Force Microscopy is used to study the morphology of several surfaces of 6H SiC (0001). The steps observed are not, as widely thought, single steps, but are of the order of one unit cell (1.5 nm) for low tilt angles and much higher (about 10 unit cells) for tilt angles of the order of 4°. Step bunching appears to lead to the formation of regular cliffs.



© Les Editions de Physique 1994

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