Numéro
J. Phys. I France
Volume 7, Numéro 11, November 1997
Page(s) 1445 - 1453
DOI https://doi.org/10.1051/jp1:1997140
DOI: 10.1051/jp1:1997140
J. Phys. I France 7 (1997) 1445-1453

Stimulated Raman and Brillouin Scattering Processes in Centrosymmetric Semiconductor Plasmas

Swati Dubey and S. Ghosh

School of Studies in Physics, Vikram University, Ujjain 456 010, India



(Received 14 February 1996, revised 18 October 1996, received in final form 6 May 1997, accepted 3 July 1997)

Abstract
A simple analytical treatment based on the hydrodynamical model of plasmas is developed to study both steady-state and transient stimulated Raman and Brillouin scattering processes in centrosymmetric or weakly noncentrosymmetric semiconductors. Gain constants, threshold-pump intensities, and optimum pulse durations for the onset of Raman and Brillouin instabilities are estimated. The qualitative behaviour of transient gain factors is found to be in agreement with the experimental and other theoretical observations. The analysis explains satisfactorily the competition between stimulated Raman and Brillouin processes in the short-and long-pulse duration regimes.



© Les Editions de Physique 1997

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