Growth roughness and instabilities due to the Schwoebel effect : a one-dimensional model
J. Phys. I France, 4 6 (1994) 947-973
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Stages of self-arrangement in growth of nanostructured graphene films related to the flow of ionized species during plasma-enhanced chemical vapor deposition
Algimantas Lukša, Viktorija Nargelienė, Marius Treideris, et al.Journal of Vacuum Science & Technology A 41 (5) (2023)
https://doi.org/10.1116/6.0002694
Nucleation and Growth of Nano-Islands during Surface Reactions or Alloying with Increased Lattice Constant
Marcel J. RostJournal of The Electrochemical Society 170 (1) 012504 (2023)
https://doi.org/10.1149/1945-7111/acaa02
Interface collisions with diffusive mass transport
Bastien Marguet, F. D. A. Aarão Reis and Olivier Pierre-LouisPhysical Review E 106 (1) (2022)
https://doi.org/10.1103/PhysRevE.106.014802
The dualism between adatom- and vacancy-based single crystal growth models
Marcel J. Rost, Leon Jacobse and Marc T. M. KoperNature Communications 10 (1) (2019)
https://doi.org/10.1038/s41467-019-13188-0
Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth
Chuan-Fu Lin, Hung-Chih Kan, Subramaniam Kanakaraju, Christopher Richardson and Raymond PhaneufNanomaterials 4 (2) 344 (2014)
https://doi.org/10.3390/nano4020344
Nucleation and growth of thin films of rod-like conjugated molecules
Gregor Hlawacek and Christian TeichertJournal of Physics: Condensed Matter 25 (14) 143202 (2013)
https://doi.org/10.1088/0953-8984/25/14/143202
Binding sites and diffusion barriers of a Ga adatom on theGaAs(001)−c(4×4)surface from first-principles computations
J. L. Roehl, A. Kolagatla, V. K. K. Ganguri, S. V. Khare and R. J. PhaneufPhysical Review B 82 (16) (2010)
https://doi.org/10.1103/PhysRevB.82.165335
Influence of microstructure on the transitions between mesoscopic thin-film morphologies in ballistic-diffusive models
Pedro A. Sánchez, Tomás Sintes, Julyan H. E. Cartwright and Oreste PiroPhysical Review E 81 (1) (2010)
https://doi.org/10.1103/PhysRevE.81.011140
The STM view of the initial stages of polycrystalline Ag film formation
Celia Polop, Christian Rosiepen, Sebastian Bleikamp, et al.New Journal of Physics 9 (3) 74 (2007)
https://doi.org/10.1088/1367-2630/9/3/074
In SituReal-Time Observation of Thin Film Deposition: Roughening, Zeno Effect, Grain Boundary Crossing Barrier, and Steering
M. J. RostPhysical Review Letters 99 (26) (2007)
https://doi.org/10.1103/PhysRevLett.99.266101
An integral equation method for epitaxial step-flow growth simulations
Jingfang Huang, Ming-Chih Lai and Yang XiangJournal of Computational Physics 216 (2) 724 (2006)
https://doi.org/10.1016/j.jcp.2006.01.006
Surface currents and slope selection in crystal growth
Paolo PolitiComptes Rendus. Physique 7 (2) 272 (2006)
https://doi.org/10.1016/j.crhy.2006.03.009
Mound slope and shape selection during unstable multilayer growth: Analysis of step-dynamics models including downward funneling
Maozhi Li and J. W. EvansPhysical Review B 73 (12) (2006)
https://doi.org/10.1103/PhysRevB.73.125434
Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)
T. Tadayyon-Eslami, H.-C. Kan, L. C. Calhoun and R. J. PhaneufPhysical Review Letters 97 (12) (2006)
https://doi.org/10.1103/PhysRevLett.97.126101
Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
J.W. Evans, P.A. Thiel and M.C. BarteltSurface Science Reports 61 (1-2) 1 (2006)
https://doi.org/10.1016/j.surfrep.2005.08.004
Evolution of patterned GaAs(001) during homoepitaxial growth: Size versus spacing
H.-C. Kan, R. Ankam, S. Shah, et al.Physical Review B 73 (19) (2006)
https://doi.org/10.1103/PhysRevB.73.195410
Breakdown of metastable step-flow growth on vicinal surfaces induced by nucleation
Daniele Vilone, Claudio Castellano and Paolo PolitiPhysical Review B 72 (24) (2005)
https://doi.org/10.1103/PhysRevB.72.245414
Four lectures on the physics of crystal growth
Joachim KrugPhysica A: Statistical Mechanics and its Applications 313 (1-2) 47 (2002)
https://doi.org/10.1016/S0378-4371(02)01034-8
Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates
B.Z Nosho, B.R Bennett, E.H Aifer and M GoldenbergJournal of Crystal Growth 236 (1-3) 155 (2002)
https://doi.org/10.1016/S0022-0248(01)02392-2
Spatiotemporal Distribution of Nucleation Events during Crystal Growth
Claudio Castellano and Paolo PolitiPhysical Review Letters 87 (5) (2001)
https://doi.org/10.1103/PhysRevLett.87.056102
A novel method to determine the Ehrlich–Schwoebel barrier
R Gerlach, T Maroutian, L Douillard, D Martinotti and H.-J ErnstSurface Science 480 (3) 97 (2001)
https://doi.org/10.1016/S0039-6028(01)00823-8
Continuum Limit of a Step Flow Model of Epitaxial Growth
R.V. Kohn, T.S. Lo and N.K. YipMRS Proceedings 701 (2001)
https://doi.org/10.1557/PROC-701-T1.7.1
A continuum model for the growth of epitaxial films
Tim P. Schulze and Weinan EJournal of Crystal Growth 222 (1-2) 414 (2001)
https://doi.org/10.1016/S0022-0248(00)00923-4
Temperature dependent morphological evolution of Pt(111) by ion erosion: destabilization, phase coexistence and coarsening
Matthias Kalff, George Comsa and Thomas MichelySurface Science 486 (1-2) 103 (2001)
https://doi.org/10.1016/S0039-6028(01)01015-9
The role of particle energy and pulsed particle flux in physical vapor deposition and pulsed–laser deposition
Stefan G. Mayr, Michael Moske, Konrad Samwer, Maggie E. Taylor and Harry A. AtwaterApplied Physics Letters 75 (26) 4091 (1999)
https://doi.org/10.1063/1.125546
Hochzeitstorten und Zipfelmützen: Strukturbildung auf Platin
Thomas Michely, Matthias Kalff, Joachim Krug and Paolo PolitiPhysikalische Blätter 55 (11) 53 (1999)
https://doi.org/10.1002/phbl.19990551111
Evolution of the mound morphology in (111) oriented polycrystalline Pd films and Co/Pd multilayered films with Pd underlayers
I. B. Chung, Y. M. Koo, J.-S. Kang, J. H. Hong and J. I. JeongJournal of Applied Physics 86 (1) 306 (1999)
https://doi.org/10.1063/1.370729
Nanofabrication via atom optics
C.C Bradley, W.R Anderson, J.J McClelland and R.J CelottaApplied Surface Science 141 (3-4) 210 (1999)
https://doi.org/10.1016/S0169-4332(98)00507-8
A discrete model for non-equilibrium growth under surface diffusion bias
S. Das Sarma and P. PunyinduSurface Science 424 (2-3) L339 (1999)
https://doi.org/10.1016/S0039-6028(99)00209-5
No coarsening in Pt(111) homoepitaxy
M. Kalff, P. Šmilauer, G. Comsa and T. MichelySurface Science 426 (3) L447 (1999)
https://doi.org/10.1016/S0039-6028(99)00351-9
Growth of Be-doped homoepitaxial GaAs films on rough substrates
V.R Coluci, M.A Cotta and M.M.G de CarvalhoJournal of Crystal Growth 205 (1-2) 36 (1999)
https://doi.org/10.1016/S0022-0248(99)00243-2
A simple model of epitaxial growth
M Biehl, W Kinzel and S SchinzerEurophysics Letters (EPL) 41 (4) 443 (1998)
https://doi.org/10.1209/epl/i1998-00171-0
Equilibrium shape and nucleation on InP(001) surfaces: effect of surface steps
L.S.M Soares, M.A Cotta, C.A.C Mendonça, K.M Ito-Landers and M.M.G de CarvalhoJournal of Crystal Growth 191 (1-2) 44 (1998)
https://doi.org/10.1016/S0022-0248(98)00003-7
An atomistic simulator for thin film deposition in three dimensions
Hanchen Huang, George H. Gilmer and Tomas Dı́az de la RubiaJournal of Applied Physics 84 (7) 3636 (1998)
https://doi.org/10.1063/1.368539
The building up of terrace periodicity by MBE growth on (0 0 1) GaAs vicinal surfaces
F. Lelarge, Z.Z. Wang, A. Cavanna, F. Laruelle and B. EtienneJournal of Crystal Growth 175-176 1102 (1997)
https://doi.org/10.1016/S0022-0248(96)00910-4
Origins of scale invariance in growth processes
Joachim KrugAdvances in Physics 46 (2) 139 (1997)
https://doi.org/10.1080/00018739700101498
Homoepitaxy of silicon at low temperature on clean and Ga-covered substrates
B Gallas, I Berbezier and J DerrienThin Solid Films 294 (1-2) 69 (1997)
https://doi.org/10.1016/S0040-6090(96)09463-1
Extended symbolic dynamics in bistable CML: Existence and stability of fronts
Ricardo Coutinho and Bastien FernandezPhysica D: Nonlinear Phenomena 108 (1-2) 60 (1997)
https://doi.org/10.1016/S0167-2789(97)82005-2
Global estimates and shocks for the noiseless conserved Kardar - Parisi - Zhang equation
Vakhtang Putkaradze, Tomas Bohr and Joachim KrugNonlinearity 10 (4) 823 (1997)
https://doi.org/10.1088/0951-7715/10/4/002
Theory and simulation of crystal growth
Andrea C Levi and Miroslav KotrlaJournal of Physics: Condensed Matter 9 (2) 299 (1997)
https://doi.org/10.1088/0953-8984/9/2/001
Scanning Tunneling Microscopy Studies of Metal on Metal Epitaxy
Robert Q. Hwang and Maria C. BarteltChemical Reviews 97 (4) 1063 (1997)
https://doi.org/10.1021/cr960070h
Growth and Properties of Ultrathin Epitaxial Layers
John A. VenablesThe Chemical Physics of Solid Surfaces, Growth and Properties of Ultrathin Epitaxial Layers 8 1 (1997)
https://doi.org/10.1016/S1571-0785(97)80004-1
Evolution of Mound Morphology in Reversible Homoepitaxy on Cu(100)
J.-K. Zuo and J. F. WendelkenPhysical Review Letters 78 (14) 2791 (1997)
https://doi.org/10.1103/PhysRevLett.78.2791
Gallium-mediated homoepitaxial growth of silicon at low temperatures
B. Gallas, I. Berbezier, J. Chevrier and J. DerrienPhysical Review B 54 (7) 4919 (1996)
https://doi.org/10.1103/PhysRevB.54.4919
Dynamical Scaling and Phase Separation in Growth Models with a Diffusion Bias
C. J. Lanczycki and S. Das SarmaPhysical Review Letters 76 (5) 780 (1996)
https://doi.org/10.1103/PhysRevLett.76.780
First-layer island growth during epitaxy
S. HarrisPhysical Review B 53 (11) 7500 (1996)
https://doi.org/10.1103/PhysRevB.53.7500
Effects of crystalline microstructure on epitaxial growth
Jacques G. AmarPhysical Review B 54 (20) 14742 (1996)
https://doi.org/10.1103/PhysRevB.54.14742
Review of atomistic simulations of surface diffusion and growth on semiconductors
Efthimios KaxirasComputational Materials Science 6 (2) 158 (1996)
https://doi.org/10.1016/0927-0256(96)00030-4
Calculated Schwoebel barriers on Si(111) steps using an empirical potential
S. Kodiyalam, K. E. Khor and S. Das SarmaPhysical Review B 53 (15) 9913 (1996)
https://doi.org/10.1103/PhysRevB.53.9913
Far from equilibrium nonconserved growth under a surface diffusion bias
C. J. Lanczycki, V. Jejjala and S. Das SarmaPhysical Review E 54 (5) 4755 (1996)
https://doi.org/10.1103/PhysRevE.54.4755
Scale Invariance, Interfaces, and Non-Equilibrium Dynamics
Dietrich E. WolfNATO ASI Series, Scale Invariance, Interfaces, and Non-Equilibrium Dynamics 344 215 (1995)
https://doi.org/10.1007/978-1-4899-1421-7_9
Scale Invariance, Interfaces, and Non-Equilibrium Dynamics
Martin SiegertNATO ASI Series, Scale Invariance, Interfaces, and Non-Equilibrium Dynamics 344 165 (1995)
https://doi.org/10.1007/978-1-4899-1421-7_7
Coarsening and slope evolution during unstable epitaxial growth
Pavel Šmilauer and Dimitri D. VvedenskyPhysical Review B 52 (19) 14263 (1995)
https://doi.org/10.1103/PhysRevB.52.14263
Coarsening of Unstable Surface Features during Fe(001) Homoepitaxy
Joseph A. Stroscio, D. T. Pierce, M. D. Stiles, A. Zangwill and L. M. SanderPhysical Review Letters 75 (23) 4246 (1995)
https://doi.org/10.1103/PhysRevLett.75.4246
Slope Selection and Coarsening in Molecular Beam Epitaxy
Martin Siegert and Michael PlischkePhysical Review Letters 73 (11) 1517 (1994)
https://doi.org/10.1103/PhysRevLett.73.1517