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Cited article:

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Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces

Lin Dong, Guosheng Sun, Liu Zheng, et al.
physica status solidi (a) 210 (11) 2503 (2013)
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Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

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Japanese Journal of Applied Physics 45 (9R) 6830 (2006)
https://doi.org/10.1143/JJAP.45.6830

Investigation of SiC clean surface and Ni/SiC interface using scanning tunneling microscopy

N. Hattori, M. Hirai, M. Kusaka and M. Iwami
Applied Surface Science 216 (1-4) 54 (2003)
https://doi.org/10.1016/S0169-4332(03)00498-7

Surface step model for micropipe formation in SiC

Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Takashi Aigo and Hirokatsu Yashiro
Journal of Crystal Growth 226 (2-3) 254 (2001)
https://doi.org/10.1016/S0022-0248(01)01387-2

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Evan M. Handy, Mulpuri V. Rao, K. A. Jones, M. A. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou and J. Mittereder
Journal of Applied Physics 86 (2) 746 (1999)
https://doi.org/10.1063/1.370798

Evolution of macrosteps on 6H-SiC(0001): Impurity-induced morphological instability of step trains

Noboru Ohtani, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro and Masatoshi Kanaya
Physical Review B 59 (7) 4592 (1999)
https://doi.org/10.1103/PhysRevB.59.4592

Ab initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces

Magdalena Sabisch, Peter Krüger and Johannes Pollmann
Physical Review B 55 (16) 10561 (1997)
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Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Fredrik Owman, C. Hallin, Per Mårtensson and E. Janzén
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Surface morphology of silicon carbide epitaxial films

J. Anthony Powell, David J. Larkin and Phillip B. Abel
Journal of Electronic Materials 24 (4) 295 (1995)
https://doi.org/10.1007/BF02659690