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Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching
Kin Kiong Lee, Takeshi Ohshima, Akihiko Ohi, Hisayoshi Itoh and Gerhard Pensl Japanese Journal of Applied Physics 45(9R) 6830 (2006) https://doi.org/10.1143/JJAP.45.6830
Investigation of SiC clean surface and Ni/SiC interface using scanning tunneling microscopy
Effectiveness of AlN encapsulant in annealing ion-implanted SiC
Evan M. Handy, Mulpuri V. Rao, K. A. Jones, M. A. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou and J. Mittereder Journal of Applied Physics 86(2) 746 (1999) https://doi.org/10.1063/1.370798
Evolution of macrosteps on 6H-SiC(0001): Impurity-induced morphological instability of step trains
Noboru Ohtani, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro and Masatoshi Kanaya Physical Review B 59(7) 4592 (1999) https://doi.org/10.1103/PhysRevB.59.4592
Stepped structure on the {0001} facet plane of α-SiC