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Cited article:

Influence of Anodizing Parameters on the Electrochemical Characteristics and Morphology of Highly Doped P-type Porous Silicon

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Silicon 13 (3) 819 (2021)
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Structural and optical properties of vapour‐etching based porous silicon

H. Kaabi, N. Mliki, M. Cheynet, et al.
Crystal Research and Technology 41 (2) 154 (2006)
https://doi.org/10.1002/crat.200510548

Calculations of the electron-energy-loss spectra of silicon nanostructures and porous silicon

C. Delerue, M. Lannoo and G. Allan
Physical Review B 56 (23) 15306 (1997)
https://doi.org/10.1103/PhysRevB.56.15306

The structural and luminescence properties of porous silicon

A. G. Cullis, L. T. Canham and P. D. J. Calcott
Journal of Applied Physics 82 (3) 909 (1997)
https://doi.org/10.1063/1.366536

Relativistic effects in electron-energy-loss-spectroscopy observations of the Si/SiO2 interface plasmon peak

P. Moreau, N. Brun, C. Walsh, C. Colliex and A. Howie
Physical Review B 56 (11) 6774 (1997)
https://doi.org/10.1103/PhysRevB.56.6774

Carrier localization in porous silicon investigated by time-resolved luminescence analysis

I. Mihalcescu, J. C. Vial and R. Romestain
Journal of Applied Physics 80 (4) 2404 (1996)
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Study of the cracking of highly porous p+ type silicon during drying

O. Belmont, D. Bellet and Y. Bréchet
Journal of Applied Physics 79 (10) 7586 (1996)
https://doi.org/10.1063/1.362415