| Numéro |
J. Phys. I France
Volume 2, Numéro 6, June 1992
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|---|---|---|
| Page(s) | 1215 - 1232 | |
| DOI | https://doi.org/10.1051/jp1:1992205 | |
DOI: 10.1051/jp1:1992205
J. Phys. I France 2 (1992) 1215-1232
Laboratoire de Minéralogie et Cristallographie, Universités Paris VI et Paris VII CNRS, URA9, 4 place Jussieu, 75252 Paris Cedex 05, France
© Les Editions de Physique 1992
J. Phys. I France 2 (1992) 1215-1232
Geometrical structure of an iron epilayer on Si (111) : an X-ray standing wave analysis
J. C. Boulliard, B. Capelle, D. Ferret, A. Lifchitz, C. Malgrange, J. F. Pétroff, A. Taccoen and Y. L. ZhengLaboratoire de Minéralogie et Cristallographie, Universités Paris VI et Paris VII CNRS, URA9, 4 place Jussieu, 75252 Paris Cedex 05, France
(Received 11 February 1992, accepted in final form 6 March 1992)
Abstract
The structure of an iron film, deposited at low temperature (50 °C) upon a silicon (111) substrate, has been determined by
means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model
of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and
a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation.
© Les Editions de Physique 1992