J. Phys. I France
Volume 2, Numéro 6, June 1992
Page(s) 1215 - 1232
DOI: 10.1051/jp1:1992205
J. Phys. I France 2 (1992) 1215-1232

Geometrical structure of an iron epilayer on Si (111) : an X-ray standing wave analysis

J. C. Boulliard, B. Capelle, D. Ferret, A. Lifchitz, C. Malgrange, J. F. Pétroff, A. Taccoen and Y. L. Zheng

Laboratoire de Minéralogie et Cristallographie, Universités Paris VI et Paris VII CNRS, URA9, 4 place Jussieu, 75252 Paris Cedex 05, France

(Received 11 February 1992, accepted in final form 6 March 1992)

The structure of an iron film, deposited at low temperature (50 °C) upon a silicon (111) substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation.

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