J. Phys. I France
Volume 7, Numéro 9, September 1997
Page(s) 1113 - 1122
DOI: 10.1051/jp1:1997112
J. Phys. I France 7 (1997) 1113-1122

Calculated Local Electronic Densities of States Induced by a point Defect in a CuO $\mathsf{_2}$ Plane

J.-P. Jardin1, T. Hocquet2, P. Germain2 and J. Labbé2

1  Laboratoire PMTM (CNRS), Université Paris Nord, 93430 Villetaneuse, France
2  Laboratoire de Physique de la Matière Condensée de l'École Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

(Received 20 November 1996, revised 13 May 1997, accepted 2 June 1997)

The effect of a point defect on the electronic density of states in a CuO 2 plane of the La 2-xSr xCuO 4 compound is calculated by a Green function method applied to a tight-binding itinerant electronic model. Different possible physical cases are discussed with respect to the shift of the atomic energy level of the impurity and to the modification of its effective transfer integral with its nearest neighbors. We show that a non vanishing magnetic moment can exist at the impurity site, even when this one is non magnetic by itself.

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