Issue |
J. Phys. I France
Volume 4, Number 6, June 1994
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Page(s) | 975 - 979 | |
DOI | https://doi.org/10.1051/jp1:1994116 |
J. Phys. I France 4 (1994) 975-979
Electrophysical properties of p- and n-type InSe intercalated with Li and Ba
V. A. Kulbachinskii, M. Z. Kovalyuk and M. N. PyrlyaLow Temperature Physics Department, Physics Faculty, Moscow State Lomonosov University, 119899, Moscow, Russia
(Received 7 December 1993, accepted 11 February 1994)
Abstract
(
-polytype of InSe single crystals of p- and n-type are
intercalated with Ba and Li by electrochemical process. This
compound shows to be a good host for the insertion of Ba or Li
atours at room temperature. The temperature dependence of the
resistivity in the temperature range
4.2 < T < 300 K and the
magnetoresistance at
T = 4.2 K are investigated. Electrical
transport measurements on Ba or Li intercalated n-InSe and
p-InSe show a decrease for n-InSe and an increase for p-InSe
of the resistivity with respect to non-intercalated samples.
Weak localization was observed in the host n-InSe samples.
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