Electrophysical properties of p- and n-type InSe intercalated with Li and Ba

V. A. Kulbachinskii; M. Z. Kovalyuk; M. N. Pyrlya

doi:doi:10.1051/jp1:1994116

Numéro		J. Phys. I France Volume 4, Numéro 6, June 1994


Page(s)		975 - 979
DOI		https://doi.org/10.1051/jp1:1994116

DOI: 10.1051/jp1:1994116
J. Phys. I France 4 (1994) 975-979

Electrophysical properties of p- and n-type InSe intercalated with Li and Ba

V. A. Kulbachinskii, M. Z. Kovalyuk and M. N. Pyrlya

Low Temperature Physics Department, Physics Faculty, Moscow State Lomonosov University, 119899, Moscow, Russia

(Received 7 December 1993, accepted 11 February 1994)

Abstract
( $\beta$ -polytype of InSe single crystals of p- and n-type are intercalated with Ba and Li by electrochemical process. This compound shows to be a good host for the insertion of Ba or Li atours at room temperature. The temperature dependence of the resistivity in the temperature range 4.2 < T < 300 K and the magnetoresistance at T = 4.2 K are investigated. Electrical transport measurements on Ba or Li intercalated n-InSe and p-InSe show a decrease for n-InSe and an increase for p-InSe of the resistivity with respect to non-intercalated samples. Weak localization was observed in the host n-InSe samples.