J. Phys. I France 4 (1994) 975-979
Electrophysical properties of p- and n-type InSe intercalated with Li and BaV. A. Kulbachinskii, M. Z. Kovalyuk and M. N. Pyrlya
Low Temperature Physics Department, Physics Faculty, Moscow State Lomonosov University, 119899, Moscow, Russia
(Received 7 December 1993, accepted 11 February 1994)
( -polytype of InSe single crystals of p- and n-type are intercalated with Ba and Li by electrochemical process. This compound shows to be a good host for the insertion of Ba or Li atours at room temperature. The temperature dependence of the resistivity in the temperature range 4.2 < T < 300 K and the magnetoresistance at T = 4.2 K are investigated. Electrical transport measurements on Ba or Li intercalated n-InSe and p-InSe show a decrease for n-InSe and an increase for p-InSe of the resistivity with respect to non-intercalated samples. Weak localization was observed in the host n-InSe samples.
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