Issue |
J. Phys. I France
Volume 5, Number 6, June 1995
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|
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Page(s) | 699 - 705 | |
DOI | https://doi.org/10.1051/jp1:1995161 |
J. Phys. I France 5 (1995) 699-705
Electrical Properties of a Synthetic Pyrite FeS 2 Non Stoichiometric Crystal
M. Morsli1, A. Bonnet1, L. Cattin1, A. Conan1 and S. Fiechter21 Laboratoire de Physique des Matériaux pour l'Electronique (E.A. 1153), Faculté des Sciences et des Techniques, 2 rue de la Houssinière, 44072 Nantes Cedex 03, France
2 Hahn Meitner Institut Berlin Gmbh, Postfach 390128, Glienicker Strabe 100, 14109 Berlin, Germany
(Received 20 July 1994, revised 13 December 1994, accepted 2 March 1995)
Abstract
FeS
2 attracts interest as a novel semiconducting material for photovoltaic energy conversion.
Electrical conductivity
and thermoelectric power (TEP)
S have been measured in a wide
temperature range (80 - 500 K) on a FeS
single crystal which was prepared by vapour
transport with bromine as transport reagent (CVT). The experimental results are analysed with the
help of a n-type semiconductor model with a donor level originating from (S-Br)
2- centres. The
random potential due to the charged lacunar and impurity sites induces the broadening of the donor
level into a narrow band. It is shown that the current carriers which take part in the conduction
processes are only electrons in the conduction band where they are scattered by acoustical phonons
and neutral impurities and electrons in the bromine narrow band in the form of thermally activated
hopping.
© Les Editions de Physique 1995