J. Phys. I France
Volume 2, Numéro 11, November 1992
Page(s) 2123 - 2129
DOI: 10.1051/jp1:1992272
J. Phys. I France 2 (1992) 2123-2129

Pressure effect and anisotropy of resistivity in organic metal (ET) 2TlHg(SCN) 4

A. I. Schegolev1, V. N. Laukhin1, A. G. Khomenko1, M. V. Kartsovnik2, R. P. Shibaeva2, L. P. Rozenberg2 and A. E. Kovalev2

1  Institute of Chemical Physics at Chernogolovka, Russian Academy of Sciences, 142432, Chernogolovka, Russia
2  Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Russia

(Received 26 June 1992, accepted 17 July 1992)

For the first time the data on resistance anisotropy in the (ET) 2TlHg(SCN) 4 salt family are presented. The data are discussed taking into account the Fermi surface of the compounds. The pressure effect on the low-temperature phase transition in (ET) 2TlHg(SCN) 4 is investigated. It is found that pressures of about 3 kbar suppress the transition. The T- P phase diagram is plotted.

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